A Robust and Efficient Compact Model for Phase-Change Memory Circuit Simulations
نویسندگان
چکیده
A phase-change memory (PCM) model for robust and efficient simulations of circuits including neuromorphic ones is reported in this work. The features a hysteretic dynamic resistance the voltage domain, incubation crystallization, are covered model. Landau-Khalatnikov (LK)-type equation ferroelectric used to develop PCM hysteresis module. voltage-controlled relaxation oscillation successfully simulated Ge 2 Sb Te xmlns:xlink="http://www.w3.org/1999/xlink">5 (GST) PCM. technique direct evaluation (DE) then developed reformulate without any internal node. significant enhancement simulation efficiency achieved compared with traditional approach sacrificing accuracy. functional correctness device acceleration effect circuit verified.
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2021
ISSN: ['0018-9383', '1557-9646']
DOI: https://doi.org/10.1109/ted.2021.3098656